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| Fuji Discrete Package IGBT n Features * Square RBSOA * Low Saturation Voltage * Less Total Power Dissipation * Minimized Internal Stray Inductance n Outline Drawing n Applications * High Power Switching * A.C. Motor Controls * D.C. Motor Controls * Uninterruptible Power Supply n Maximum Ratings and Characteristics * Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage ( Tc=25C) Symbols VCES VGES DC Tc= 25C IC 25 Collector Current DC Tc=100C IC 100 1ms Tc= 25C IC PULSE IGBT Max. Power Dissipation PC FWD Max. Power Dissipation PC Operating Temperature Tj Storage Temperature Tstg Mounting Screw Torque n Equivalent Circuit Ratings 600 20 33 15 132 120 60 +150 -40 +150 50 Units V V A W W C C Nm * Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance ( at Tj=25C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=600V VCE=0V VGE= 20V VGE=20V IC=15mA VGE=15V IC=15A VGE=0V VCE=10V f=1MHz VCC=300V IC=15A VGE=15V RG=160 VCC=300V IC=15A VGE=+15V RG=16 IF=15A VGE=0V IF=15A, VGE=-10V, di/dt=100A/s Min. Typ. Max. 1.0 20 8.5 3.0 Units mA A V pF 1.2 0.6 1.0 0.35 0.16 0.11 0.30 0.35 3.0 300 5.5 1000 200 40 Turn-on Time Switching Time Turn-off Time Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time s s V ns * Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Test Conditions IGBT Diode Min. Typ. Max. 1.04 2.08 Units C/W Collector Current vs. Collector-Emitter Voltage 60 T j= 2 5 C 60 V GE = 2 0 V Collector Current vs. Collector-Emitter Voltage T j= 1 2 5 C 50 15V V GE = 2 0 V 50 [A] [A] 40 12V 30 40 C Collector Current : I Collector Current : I C 15V 30 12V 20 20 10V 10 8V 0 10 10V 8V 0 0 1 2 3 4 5 6 Collector-Emitter Voltage : V CE [V] 0 1 2 3 4 5 6 Collector-Emitter Voltage : V CE [V] Collector-Emitter Voltage vs. Gate-Emitter Voltage 12 T j= 2 5 C 12 Collector-Emitter Voltage vs. Gate-Emitter Voltage T j= 1 2 5 C [V] 10 [V] CE 10 CE Collector-Emitter Voltage : V 6 Collector-Emitter Voltage : V 8 8 6 4 IC = 2 30A 15A 7.5A 0 0 5 10 15 20 25 4 IC = 30A 15A 7.5A 2 0 0 5 10 15 20 25 Gate-Emitter Voltage : V GE [V] Gate-Emitter Voltage : V GE [V] Switching Time vs. Collector Current V CC = 3 0 0 V , R G= 1 6 , V GE = 1 5 V , T j= 2 5 C 1000 1000 Switching Time vs. Collector Current V CC = 3 0 0 V , R G = 1 6 , V GE = 1 5 V , T j= 1 2 5 C t off , t r, t off , t f [nsec] , t r, t off , t f [nsec] tf t off 100 t on tf t on 100 Switching Time : t on Switching Time : t on tr tr 10 0 5 10 15 20 25 30 10 0 5 10 15 20 25 30 Collector Current : I C [A] Collector Current : I C [A] Switching Time vs. R G V CC =300V, I C = 1 5 A , V GE = 1 5 V , T j= 2 5 C Switching Time vs. R G V CC =300V, I C = 1 5 A , V GE = 1 5 V , T j= 1 2 5 C , t r, t off , t f [nsec] , t r, t off , t f [nsec] 1000 t on t off tr tf 100 1000 t off t on tf tr on Switching Time : t Switching Time : t on 100 10 0 100 Gate Resistance : R G [ ] 10 0 100 Gate Resistance : R G [ ] Capacitance vs. Collector-Emitter Voltage T j= 2 5 C 500 Dynamic Input Characteristics T j= 2 5 C 25 , C res , C ies [pF] [V] 1000 CE Collector-Emitter Voltage : V 300 15 Capacitance : C C oes 100 200 10 C res 100 5 10 0 0 5 10 15 20 25 30 35 0 10 20 30 40 50 60 70 G a t e C h a r g e : Q G [nQ] 80 0 90 Reverse Recovery Time vs. Forward Current V R= 2 0 0 V , -di Reverse Recovery Current vs. Forward Current V R= 2 0 0 V , -di 200 / dt= 1 0 0 A / s e c 8 / dt = 1 0 0 A / s e c [nsec] [A] 150 125C 6 rr Reverse Recovery Time : t 100 25C 50 Reverse Recovery Current : I rr 125C 4 25C 2 0 0 5 10 15 20 25 30 0 0 5 10 15 20 25 30 Forward Current : I F [A] Forward Current : I F [A] Gate-Emitter Voltage : V oes GE [V] C ies 400 V C C =200V, 300V, 400V 20 Reverse Biased Safe Operating Area + V GE = 1 5 V , - V GE < 15V, T j<125C, R G >1 6 35 250 Typical Short Circuit Capability V CC = 4 0 0 V , R G = 1 6 , T j= 1 2 5 C 100 30 200 [A] [A] SC 25 C Short Circuit Current : I 15 100 40 10 50 20 5 0 0 100 200 300 400 500 600 700 0 5 10 15 20 [V] Gate Voltage : V GE Collector-Emitter Voltage : V CE [V] 0 25 Reverse Recovery Characteristics vs. Forward Voltage vs. Forward Current 60 T j= 1 2 5 C 2 5 C 200 I F = 1 5 A , T j= 1 2 5 C -di / dt 20 [nsec] 50 150 15 [A] 30 I rr 100 10 20 50 10 t rr 5 0 0,0 0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0 100 200 -di 300 / dt 400 500 0 600 Forward Voltage : V F [V] [A/sec] Transient Thermal Resistance Thermal Resistance : Rth(j-c) [C/W] 10 1 FWD 0 10 IGBT 10 -1 10 -4 10 -2 10 -3 10 -2 10 -1 10 0 Pulse Width : P W [sec] Reverse Recovery Current : I 40 Reverse Recovery Time : t Forward Current : I F rr rr [A] Short Circuit Time : t Collector Current : I 20 150 60 SC t SC [s] I SC 80 Switching losses (Eon, Eoff vs. IC) IC [A] Test Circuit Switching waveforms P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 www.collmer.com |
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